"Bonding Structure and Properties of Ion Enhanced Reactive Magnetron Sp" by Robert Lillard
 

Title

Bonding Structure and Properties of Ion Enhanced Reactive Magnetron Sputtered Silicon Carbonitride Films

Document Type

Article

Publication Date

Summer 2000

Abstract

Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhanced radio-frequency (rf) magnetron sputtering from a Si4C target using a mixture of Ar and N2 gases. The oxidation resistance of the films was investigated in an oxygen atmosphere over the temperature range of 0-1000 °C. X-ray photoelectron spectroscopy showed that the a-SiCN films exhibited a well-defined Si-C-N bonding structure. The composition, density, hardness, and stress were uniquely characterized with respect to the average energy per deposited atom. Under optimum deposition conditions a-SiCN films can be prepared to exhibit high density (>2.6 g cm-3), high hardness (>25 GPa), and enhanced oxidization resistance at temperatures up to 800 °C.

Volume

12

Issue

37

First Page

591

Last Page

597

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