Optimization of the Temporal Response of Ii-vi Direct Type Semiconductor Detectors for Flat-panel Pulsed X-ray Imaging
The rising and falling edges of detected signal pulses have been measured utilizing X-ray ionization of a planar Cd1-xZnx Te system under different irradiation geometries, at different detector thicknesses, and applied electric fields. The experimental results of this study indicate that the time response of the CdZnTe based X-ray system is suitable for digital pulsed radiographic applications
Instrumentation and Measurement
Guntupalli, R.; Nemer, R.; Odogba, J.; Shah, N.; Vendantham, S.; Suryanarayanan, S.; Chowdhury, S.; Passerini, A. G.; Mehta, K.; Sumrain, S.; Patnekar, N.; Nataraj, K.; Evans, Edward; and Russo, F., "Optimization of the Temporal Response of Ii-vi Direct Type Semiconductor Detectors for Flat-panel Pulsed X-ray Imaging" (2001). Chemical and Biomolecular Engineering Faculty Research. 420.