Polymer Engineering Faculty Research

Title

Solution-processed near-infrared polymer photodetectors with an inverted device structure

Document Type

Article

Publication Date

12-2012

Abstract

Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 1012 cm Hz1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.

Publication Title

Organic Electronics

Volume

13

Issue

12

First Page

2929

Last Page

2934